NSG America, Inc. Announces a 10G InGaAs Avalanche Photodiode ideal for Long Reach Optical Systems
Somerset, NJ (March, 2006)…NSG America, creator of the SELFOC® Lens and the world’s leading supplier of Gradient Index Lenses, has introduced a 10G InGaAs Avalanche Photodiode (APD) at this year’s OFC/NFOEC show. This new, high speed APD is suitable for all optical communications applications that require long reach requirements, such as SONET OC-192 / SDH STM-64, DWDM long haul systems and 10Gb/s Ethernet.
This 10G APD has extremely low dark current and has a spectral response of 1000 to 1625nm to detect very small amounts of light over a wide wavelength range. NSG’s APD employs a separate absorption and multiplication (SAM) structure using InGaAs and InP, respectively. The NSG 10G APD is sold as a chip-on-carrier assembly and uses a back illuminated structure. The APD active diameter of the chip is just 22µm and is assembled on a ceramic sub-carrier.
On the front side of each chip, there are five Au bumps that measure 10µm high. The center bump corresponds to an anode, under which there is an active area with a 22µm diameter. The other four Au bumps are placed on the corners of the chip and are used for bonding purposes. On back side of the chip, the contact corresponds to a cathode and forms an aperture of 100µm diameter at the center.
Dr. Simin Cai, President and CEO for NSG America Inc. explains “NSG is offering this 10Gb/s APD to meet the demands of the metro and long haul markets. We use a planar structure for high reliability. Our experience in material based manufacturing gives NSG a technological advantage in producing APDs which are reliable and low in cost.”