TAP Detector Array: 4, 8, 9 and 10 channels

Applications:
 

  EDFA Power Monitoring/Control
  DWDM Channel Monitoring
  ROADM Port Monitoring/Control

 

TAP Detector Array Datasheet
 

Features:

  Low Insertion Loss
  Low Wavelength Dependent Loss
  Low Dark Current
  Telcordia GR-468-CORE Compliant
  Broad Wavelength Range
  Excellent Thermal Stability

Description:

Go!Foton’s Integrated Tap Detector Array combines optical couplers, based on NSG’s filter-on-lens technology, with Go!Foton’s proprietary PIN photodiodes to create a multi channel optical power monitor.  The integrated design reduces the number of parts, minimizes fiber handling and results in a compact footprint, which simplifies assembly of amplifier and WDM monitoring devices.  The hermetically sealed InGaAs photo detector has a low dark current, a flat and rapid power response and extremely high temperature stability across a wide wavelength range.  This device is also available with “Ribbonized Fiber” option for easy connection.

Qualification and Reliability:

Opto-Electronic devices has been qualified according to Telcordia GR-468, CORE “Generic Reliability Assurance Requirements for Opto-Electronic Devices used in Telecommunications Equipment” and the applicable company Product Quality and Reliability Program that includes conduct of Telcordia GR-468 section 2.1.4 Requalification and On-going Reliability Test (ORT) requirements and/or its equivalent.Any change to identified test conditions requires justification and approval and shall be communicated to Customers.

4CH and 8CH Compact Unidirectional Tap Detector Array

4CH and 8CH TAPD Array Drawing

9CH and 10CH Compact Unidirectional Tap Detector Array

9CH and 10 CH TAPD Array Drawing

Absolute Maximum Rating

Parameter
Symbol
Unit
Specification
Min.
Typ.
Max.
Operating Temperature
Top
°C
-40
-
+85
Operating humidity Range (No Condensation)
RHOP
%
5
-
95
Storage Temperature Range
Tstg
°C
-40
-
+85
Storage Humidity Range (No Condensation)
RHstg
%
5
-
95
Reverse Bias
Vr
V
-
-
25
Forward Current
If
mA
-
-
10
Electrostatic Discharge(ESD) Threshold
C:100pF,R:1.5kΩ,Human Body Model
VESD
V
-
-
500
Soldering Temperature (< 10 sec) at least 2mm away from
the device's body.
TSol/sub>
°C
-
250
-

Optical and Electrical Characteristics

ParameterSymbolUnitSpecificationCondition
Tap RatioTR%0.5125103050
Wavelength RangeλRnm1520~1570C-Band
1570~1610L-Band
1510~1610CL-Band
Insertion LossILdB<0.5<0.5<0.5<0.6<0.8<2.3<3.6λR , Top
Wavelength
Flatness
WDLdB<0.1C-Band and L-Band
<0.15CL-Band
Temperature
Dependent Loss
TDLdB<0.151550nm , Top
Polarization
Dependent Loss
PDLdB<0.051550nm,RT
Return LossRLdB>501550nm,RT
Maximum Optical Power
Handling
PMAXdBm262320191386-
Minimum
Responsivity
RsMIN48164570240350λR , Top, Vr:5V
Maximum
Responsivity
RsMAX8.5152665145400600λR , Top, Vr:5V
Wavelength
Dependent
Responsivity
WDRs<0.40C-Band ,Top, Vr:5V
<0.40L-Band ,Top, Vr:5V
<0.45CL-Band ,Top, Vr:5V
Temperature
Dependent
Responsivity
TDRsdB<0.40C-Band ,Top, Vr:5V
<0.40L-Band ,Top, Vr:5V
<0.45CL-Band ,Top, Vr:5V
Polarization
Dependent
Responsivity
PDRsdB<0.20λR , Top, Vr:5V
Dark Current @ 25°CIdRTnA<0.10Vr:5V
Dark Current @ 85°CIdHTnA<5Vr:5V
LinearityLIN%±5%PIN: +10dBm to-30dBm,
Vr:5V,1550nm,RT
CapacitanceCpF2.5(maximum)1MHz, Vr:5V
BandwidthBWGHz1 (Typical)-3dB,RL=50Ω,Vr:5V
TAPD Array More Info

TAPD Array Ordering Info
TAPD Array Ordering Info 1