 Low Leakage Power Monitor, PIN Photodiodes
Applications:
- Monitor for Amplifier/Telecommunication System
- DWDM Channel Monitoring
- PON System Monitoring
Features:
-
Low Leakage(Low Dark Current)
-
Epoxy-Free Optical Path
- Exceptionally Stable and Reliable
-
Dual Window Version Available
-
High Return Loss
Description:
Go!Foton’s “Low Leakage” Power Monitor PIN Photodiode assemblies are designed for optical network monitoring applications. The photodiode die is fabricated on Go!Foton’s proprietary wafer fab and assembled into an hermetically-sealed package. InGaAs photo Diode has a low Leakage (low dark current) and a flat and rapid power response across a wide wavelength range. This product is available with mounting brackets(Flange) to ease board assembly.
| Dimensions: |
 |
| * Dimensions are in mm unless otherwise noted |
Specifications:
| Specifications (Preliminary) |
| Unless otherwise notified, Reverse Bias Vr = 5V and 25 oC |
| Absolute |
Parameter |
|
Specification |
|
| Maximum |
Reverse Voltage (V) |
|
25 |
|
| Rating |
Forward Current (mA) |
|
10 |
|
| |
Reverse Current (mA) |
|
10 |
|
| |
Operating Case Temperature (OC) |
|
-40 to +85 |
|
| |
Storage Temperature (OC) |
|
-40 to +85 |
|
| |
Lead Soldering Temperature (OC) |
250 (10sec, 2mm from case) |
| |
|
|
|
|
| Electro-Optical |
Parameter |
Min. |
Typ. |
Max. |
| Characteristics |
Active Area Diameter (um) |
|
75 |
|
| |
Responsivity (A/W) |
|
|
|
| |
λ = 1310nm |
0.80 |
|
|
| |
λ = 1550nm |
0.85 |
|
|
| |
λ = 1625nm |
0.80 |
|
|
| |
Return Loss (dB) |
|
|
|
| |
λ = 1310nm |
- |
|
|
| |
λ = 1550nm |
40 |
|
|
| |
λ = 1625nm |
40 |
|
|
| |
Dark Current (nA) “Low Leakage” |
|
|
0.08 |
| |
Capacitance (pF) * |
|
|
0.9 |
| |
Bandwidth (GHz) |
|
2.0 |
|
| |
PDRs (dB) |
|
|
|
| |
λ = 1310nm |
|
|
0.1 |
| |
λ = 1550nm |
|
|
0.1 |
| |
λ = 1625nm |
|
|
0.1 |
| |
* Case Grounded. |
| |
** All specifications are specified without fiber connector. |
Ordering Information:
|
 |
 PDF data sheet
|
