InGaAs Avalanche Photodiode (APD) 1.25Gbps With TIA For Burst-Mode

Applications:
 

Ge-PON OLT

SONET OC-48/SDH STM-16 Transmission Systems

DWDM Systems

Gibabit Ethernet / Fiber Channel Systems

 

 
Go!Foton’s Avalanche Photodiode (APD) with TIA is suitable for GE-PON burst-mode applications. This InGaAs APD is fabricated at Go!Foton’s proprietary wafer fab. It has a planar structure for high reliability and very high sensitivity and low noise. The APD chip and burst-mode TIA are assembled in 5 pin TO46 package with ball lens that makes optical coupling easy.

 

Data Rate up to 1.25 Gbps

Suitable for burst-mode

Hermetically Sealed

1000 to 1625nm Spectral Response

 

 

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InGaAs APD 1.25G BM TIA Data Sheet