Go!Foton’s Avalanche Photodiode (APD) with TIA is suitable for GE-PON burst-mode applications. This InGaAs APD is fabricated at Go!Foton’s proprietary wafer fab. It has a planar structure for high reliability and very high sensitivity and low noise. The APD chip and burst-mode TIA are assembled in 5 pin TO46 package with ball lens that makes optical coupling easy.
InGaAs Avalanche Photodiode (APD) 1.25Gbps With TIA For Burst-Mode
SONET OC-48/SDH STM-16 Transmission Systems
Gibabit Ethernet / Fiber Channel Systems
Data Rate up to 1.25 Gbps
Suitable for burst-mode
1000 to 1625nm Spectral Response