InGaAs Avalanche Photodiode (APD) 10 Gbps (Chip)

Applications:

 

  Long Haul Receivers
  SONET/SDH Receivers
  Metro Networks

 

 
Go!Foton’s Avalanche Photodiode (APD) is suitable for 10 Gbps applications in optical communications.  This InGaAs APD has a planer structure for high reliability.  The optical signal goes through the aperture for a back illuminated structure.

 

  Ceramic sub-carrier
  Planer Structure for High Reliability
  1000 to 1625nm Spectral Response
  Low Dark Current

 
InGaAs Avalanche Photodiode (APD) 10 Gbps(Chip)

 

Parameter Min. Typ. Max. Conditions
Active Area Diameter (μm) 22
Responsivity (A/W) 0.80 1.55μm, M=1
Dark Current (nA) 50 0.9V , 25OC
Breakdwon Voltage (V) 35 10μA
Capacitance (pF) 0.7 1MHz, M=10
Frequency Response (GHz) 7 M=8, RL=50
Operating Voltage (V) M=10
Punch-through Voltage (V) 15 Vbr-10 See below
Temperature Coefficient of Vb (%/OC) 0.15
1) Condition unless noted; 25OC, Poutt =1uW
2) Punch-through voltage is defined as voltage where 1.5V above the voltage where the first deviation of IV curve under illumination shos local maximum.
3) Responsivity at punch-through voltage is defined as responsivity at M=1


Absolute Maximum Rating

Parameter Min. Typ. Max.
Reverse Current (mA) 1
Forard Current (mA) 1
Maximum Input Poer (mW) 0.5
Operating Temperature4) (OC) 0 +85
Storage Temperature4) (OC) -40 +85
4) Operational or storage beyond these absolute maximum ratings cause permanent damage to the device.

 
Product Code (Ordering Information): PDAB0022-C

InGaAs Avalanche Photodiode (APD) 10 Gbps (Chip) PDF Data Sheet

 
InGaAs Avalanche Photodiode (APD) 10 Gbps(Chip)