Go!Foton’s Avalanche Photodiode (APD) is suitable for 10 Gbps applications in optical communications. This InGaAs APD has a planer structure for high reliability. The optical signal goes through the aperture for a back illuminated structure.
InGaAs Avalanche Photodiode (APD) 10 Gbps (Chip)
Applications:
Long Haul Receivers
SONET/SDH Receivers
Metro Networks
Ceramic sub-carrier
Planer Structure for High Reliability
1000 to 1625nm Spectral Response
Low Dark Current
| Parameter | Min. | Typ. | Max. | Conditions |
| Active Area Diameter (μm) | 22 | |||
| Responsivity (A/W) | 0.80 | 1.55μm, M=1 | ||
| Dark Current (nA) | 50 | 0.9V , 25OC | ||
| Breakdwon Voltage (V) | 35 | 10μA | ||
| Capacitance (pF) | 0.7 | 1MHz, M=10 | ||
| Frequency Response (GHz) | 7 | M=8, RL=50 | ||
| Operating Voltage (V) | M=10 | |||
| Punch-through Voltage (V) | 15 | Vbr-10 | See below | |
| Temperature Coefficient of Vb (%/OC) | 0.15 | |||
| 1) Condition unless noted; 25OC, Poutt =1uW | ||||
| 2) Punch-through voltage is defined as voltage where 1.5V above the voltage where the first deviation of IV curve under illumination shos local maximum. | ||||
| 3) Responsivity at punch-through voltage is defined as responsivity at M=1 | ||||
Absolute Maximum Rating
| Parameter | Min. | Typ. | Max. |
| Reverse Current (mA) | 1 | ||
| Forard Current (mA) | 1 | ||
| Maximum Input Poer (mW) | 0.5 | ||
| Operating Temperature4) (OC) | 0 | +85 | |
| Storage Temperature4) (OC) | -40 | +85 | |
| 4) Operational or storage beyond these absolute maximum ratings cause permanent damage to the device. | |||
Product Code (Ordering Information): PDAB0022-C
InGaAs Avalanche Photodiode (APD) 10 Gbps (Chip) PDF Data Sheet
