Go!Foton PDAF0055C Series are InGaAs APD chip. It is front illuminated type and planer structure with 55 um active area diameter. It is suitable for 2.5 Gbps application in G-PON / GE-PON. APD chip is fabricated at Go!Foton proprietary wafer fab.
InGaAs Avalanche Photodiode (APD) 2.5 Gbps Chip Front Illuminated GPON / GEPON
G-PON / Ge-PON
Long Haul Receivers
SONET OC-48/SDH STM-16 Transmission System
Planer Structure for High Reliability
1000 to 1625nm Spectral Response
Low Dark Current