InGaAs Avalanche Photodiode (APD) 2.5 Gbps (Chip or Chip-on-Carrier)

Applications:

 

  G-PON / Ge-PON
  Long Haul Receivers
  SONET/SDH Receivers

 

 
Go!Foton’s Avalanche Photodiode (APD), front-illuminate type is suitable for 2.5 Gbps applications in G-PON/Ge-PON.  This InGaAs APD has a planer structure for high reliability.

 
InGaAs Avalanche Photodiode (APD) 2.5 Gbps(Chip or Chip-on-Carrier)InGaAs Avalanche Photodiode (APD) 2.5 Gbps(Chip or Chip-on-Carrier)

 
  Ceramic sub-carrier
  Planer Structure for High Reliability
  1000 to 1625nm Spectral Response
  Low Dark Current

 
Electro-Optical Characteristics

Parameter Min. Typ. Max. Conditions
Active Area Diameter (μm) 55
Responsivity (A/W) 0.80 1.55μm, M=1
Dark Current (nA) 50 0.9V , 25OC
Breakdwon Voltage (V) 35 60 10μA
Capacitance (pF) 0.7 1MHz, M=10
Frequency Response (GHz) 1.5 M=8, RL=50
Operating Voltage (V) Vbr-1 M=10
Punch-through Voltage (V) 15 Vbr-10 See below
Temperature Coefficient of Vb (%/OC) 0.1 0.15 0.25
1) Condition unless noted; 25OC, Pout =1uW
2) Punch-through voltage is defined as voltage where 1.5V above the voltage where the first deviation of IV curve under illumination shos local maximum.
3) Responsivity at punch-through voltage is defined as responsivity at M=1


Absolute Maximum Rating

Parameter Min. Typ. Max.
Reverse Current (mA) 1
Forard Current (mA) 2
Maximum Input Poer (mW) 1
Operating Temperature4) (OC) 0 +85
Storage Temperature4) (OC) -40 +85
4) Operational or storage beyond these absolute maximum ratings cause permanent damage to the device.

 
InGaAs Avalanche Photodiode (APD) 2.5 Gbps (Chip or Chip-on-Carrier) PDF Data Sheet

 
InGaAs Avalanche Photodiode (APD) 2.5 Gbps(Chip or Chip-on-Carrier)

InGaAs Avalanche Photodiode (APD) 2.5 Gbps(Chip or Chip-on-Carrier)