Go!Foton Avalanche Photodiode (APD) with TIA is suitable for 2.5 Gbps applications in G-PON transceiver products, and other optical systems. This InGaAs APD has a planar structure for high reliability. This device has very high sensitivity and low noise, making it suitable for FTTx/PON systems. APD chip is fabricated at Go!Foton proprietary wafer fab.
InGaAs Avalanche Photodiode (APD) 2.5 Gbps with TIA
Applications:
G-PON / Ge-PON
SONET OC-48/SDH STM-16 Transmission System
DWDM System
Gigabit Ethernet/Fiber Channel Systems
Hermetically Sealed
Planar Structure for High Reliability
High Sensitivity (-32dBm)
1000 to 1625nm Spectral Response
Low Dark Current
Product Code (Ordering Information): PDAF0055TOL-T10
2.5G APD with TIA PDF Data Sheet
