Go!Foton large area Indium Gallium Arsenide (InGaAs) Photodiode consists of pin structure and photo sensitive area of 1 mm diameter with planer structure for high reliability. This PD has photo response in the near infrared spectrum range, between 950 and 1650 nm. This device has very high sensitivity and low noise, making it suitable for industrial application. The photodiode is mounted on ceramic subcarrier. PD chip is fabricated at Go!Foton proprietary wafer fab.