InGaAs PIN Photodiode with Large Photosensitive Area Chip-on-Carrier

Applications:

Optical Power Meter
Infrared Rangefinder
Spectroscopy

Features:

950 to 1625nm Spectral Response
High Sensitivity
Planer Structure for High Reliability
High Shunt Resistance
Low Dark Current
Low Capacitance
Chip-on-Carrier

PIN Photodiode with Large Photosensitive Area Datasheet

Description

Go!Foton large area Indium Gallium Arsenide (InGaAs) Photodiode consists of pin structure and photo sensitive area of 1 mm diameter with planer structure for high reliability. This PD has photo response in the near infrared spectrum range, between 950 and 1650 nm. This device has very high sensitivity and low noise, making it suitable for industrial application. The photodiode is mounted on ceramic subcarrier. PD chip is fabricated at Go!Foton proprietary wafer fab.

Specifications:

PDF Datasheet:

InGaAs PIN PD with Large Photosensitive Area, Chip on Carrier Datasheet

InGaAs PIN Photodiode with Large Photosensitive Area Chip-on-Carrier