Go!Foton large area Indium Gallium Arsenide (InGaAs) Photodiode consists of pin structure and photo sensitive area of 1 mm diameter with planer structure for high reliability. This PD has photo response in the near infrared spectrum range, between 950 and 1650 nm. This device has very high sensitivity and low noise, making it suitable for industrial application. The photodiode is mounted on ceramic subcarrier. PD chip is fabricated at Go!Foton proprietary wafer fab.

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Go!Foton PDAF0055C Series are InGaAs APD chip. It is front illuminated type and planer structure with 55 um active area diameter. It is suitable for 2.5 Gbps application in G-PON / GE-PON. APD chip is fabricated at Go!Foton proprietary wafer fab.

Go!Foton’s Avalanche Photodiode (APD), front-illuminate type is suitable for 2.5 Gbps applications in G-PON/Ge-PON.  This InGaAs APD has a planer structure for high reliability.

Go!Foton’s Avalanche Photodiode (APD) is suitable for 10 Gbps applications in optical communications.  This InGaAs APD has a planer structure for high reliability.  The optical signal goes through the aperture for a back illuminated structure.

Go!Foton Avalanche Photodiode (APD) is suitable for 10 Gbps applications in optical communications. This InGaAs APD has a planer structure for high reliability. It has back illuminated structure. The optical signal goes through the integrated lens on the back surface.